DEPTH DISTRIBUTIONS OF LOW-ENERGY DEUTERIUM IMPLANTED INTO SILICON AS DETERMINED BY SIMS

被引：41

作者：

MAGEE, CW

COHEN, SA

VOSS, DE

BRICE, DK

机构：

[1] PRINCETON UNIV,PLASMA PHYS LAB,PRINCETON,NJ 08540

[2] SANDIA LABS,ALBUQUERQUE,NM 87185

来源：

NUCLEAR INSTRUMENTS & METHODS | 1980年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(80)91280-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：383 / 387

页数：5

共 16 条

[1] BRICE DK, 1972, RAD EFF, V13, P215
[2] MODEL FOR HYDROGEN ISOTOPE BACKSCATTERING, TRAPPING AND DEPTH PROFILES IN CARBON AND AMORPHOUS SILICON
COHEN, SA
MCCRACKEN, GM
[J]. JOURNAL OF NUCLEAR MATERIALS, 1979, 84 (1-2) : 157 - 166
[3] BEHAVIOR OF IMPLANTED D AND HE IN PYROLYTIC-GRAPHITE
LANGLEY, RA
BLEWER, RS
ROTH, J
[J]. JOURNAL OF NUCLEAR MATERIALS, 1978, 76-7 (1-2) : 313 - 321
[4] INFLUENCE OF ATOMIC MIXING AND PREFERENTIAL SPUTTERING ON DEPTH PROFILES AND INTERFACES
LIAU, ZL
TSAUR, BY
MAYER, JW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 121 - 127
[5] HYDROGEN IMPLANTATION IN SILICON BETWEEN 1.5 AND 60 KEV
LIGEON, E
GUIVARCH, A
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 27 (3-4): : 129 - 137
[6] Lindhard J., 1963, MAT FYS MEDD K DAN V, V33, P31
[7] HYDROGEN-ION IMPLANTATION PROFILES AS DETERMINED BY SIMS
MAGEE, CW
WU, CP
[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 529 - 533
[8] SECONDARY ION QUADRUPOLE MASS-SPECTROMETER FOR DEPTH PROFILING-DESIGN AND PERFORMANCE EVALUATION
MAGEE, CW
HARRINGTON, WL
HONIG, RE
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (04) : 477 - 485
[9] DEPTH PROFILING OF N-TYPE DOPANTS IN SI AND GAAS USING CS+ BOMBARDMENT NEGATIVE SECONDARY ION MASS-SPECTROMETRY IN ULTRAHIGH-VACUUM
MAGEE, CW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) : 660 - 663
[10] ION-BEAM SPUTTERING - EFFECT OF INCIDENT ION ENERGY ON ATOMIC MIXING IN SUBSURFACE LAYERS
MCHUGH, JA
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (04): : 209 - 215

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