TUNNELING IN ULTRATHIN GLASS FILMS

被引：2

作者：

LAIBOWITZ, RB

ELDRIDGE, JM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1969年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.1315738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：714 / +

页数：1

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共 14 条

[1] STAIN FILMS ON SILICON
ARCHER, RJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 104 - 110
[2] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY
ARCHER, RJ
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &
[3] ARCHER RJ, 1964, NBS256 MISC PUBL, P260
[4] POLARIZATION OF THIN PHOSPHOSILICATE GLASS FILMS IN MGOS STRUCTURES
ELDRIDGE, JM
LAIBOWITZ, RB
BALK, P
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1922 - +
[5] ELDRIDGE JM, 1968, T METALL SOC AIME, V242, P539
[6] STUDY OF SUPERCONDUCTORS BY ELECTRON TUNNELING
GIAEVER, I
MEGERLE, K
[J]. PHYSICAL REVIEW, 1961, 122 (04): : 1101 - &
[7] FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON
KOOI, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1383 - 1381
[8] TUNNELING IN METAL-GLASS-SILICON STRUCTURES
LAIBOWIT.RB
[J]. APPLIED PHYSICS LETTERS, 1968, 13 (07) : 221 - &
[9] MOLECULAR VIBRATION SPECTRA BY INELASTIC ELECTRON TUNNELING
LAMBE, J
JAKLEVIC, RC
[J]. PHYSICAL REVIEW, 1968, 165 (03): : 821 - &
[10] EFFECT OF PHOSPHORUS IN SIO2 AS SHOWN BY INFRARED SPECTROSCOPY (SEMICONDUCTOR DEVICE PASSIVICATION - GLASSES E)
PLISKIN, WA
[J]. APPLIED PHYSICS LETTERS, 1965, 7 (06) : 158 - &