OXYGEN COMPLEXES IN III-V-COMPOUNDS AS DETERMINED BY SECONDARY-ION MASS-SPECTROMETRY UNDER CESIUM BOMBARDMENT

被引：8

作者：

GAUNEAU, M ^{[1
]}

CHAPLAIN, R ^{[1
]}

RUPERT, A ^{[1
]}

LECORRE, A ^{[1
]}

SALVI, M ^{[1
]}

LHARIDON, H ^{[1
]}

LECROSNIER, D ^{[1
]}

DUBONCHEVALLIER, C ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,PAB,MCT,F-92220 BAGNEUX,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 06期

关键词：

D O I：

10.1063/1.344278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2241 / 2247

页数：7

共 19 条

[1] SECONDARY ION MASS-SPECTROMETRY STUDY OF OXYGEN ACCUMULATION AT GAAS ALGAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

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PY, MA ;

ILEGEMS, M .

APPLIED PHYSICS LETTERS, 1987, 50 (24) :1730-1732

[2]

DUBONCHEVALLIER C, 1986, 1986 EMRS C P STRASB, P455

[3]

FAVENNEC PN, 1985, 12TH P INT S GAAS RE, P343

[4] SIMS ANALYSIS, UNDER CESIUM BOMBARDMENT, OF SI IN GAAS (AL, GA)AS SUPERLATTICES - DETECTION LIMIT AND DEPTH RESOLUTION [J].

GAUNEAU, M ;

CHAPLAIN, R ;

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SALVI, M ;

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AZOULAY, R ;

DUHAMEL, N .

SURFACE AND INTERFACE ANALYSIS, 1988, 11 (11) :545-552

[5] FRACTIONAL SECONDARY ION YIELDS OF BE, ZN, CR AND SI IN INP, GAINAS AND GA1-XALXAS [J].

GAUNEAU, M ;

CHAPLAIN, R ;

SALVI, M ;

DUHAMEL, N .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) :180-182

[6]

GAUNEAU M, 1977, ANALUSIS, V5, P357

[7]

GAUNEAU M, 1984, J MICROSC SPECT ELEC, V9, P451

[8]

GAUNEAU M, 1981, J MICROSC SPECT ELEC, V6, P213

[9] INFLUENCE OF OXYGEN IMPLANTATION ON THE CARRIER CONCENTRATION PROFILE IN P-GAAS [J].

HUMERHAGER, T ;

ZWICKNAGL, P .

APPLIED PHYSICS LETTERS, 1988, 52 (01) :63-64

[10] INFLUENCE OF OXYGEN INCORPORATION ON BERYLLIUM-DOPED INGAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

LECORRE, A ;

CAULET, J ;

GAUNEAU, M ;

LOUALICHE, S ;

LHARIDON, H ;

LECROSNIER, D ;

ROIZES, A ;

DAVID, JP .

APPLIED PHYSICS LETTERS, 1987, 51 (20) :1597-1599

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