INFLUENCE OF DOPING CONCENTRATION ON SWITCHING PROCESSES IN PSN RECTIFIERS .I. THEORY

被引：12

作者：

BENDA, H

DANNHAUSER, F

PORST, A

SPENKE, E

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 12期

关键词：

D O I：

10.1016/0038-1101(67)90056-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1133 / +

页数：1

共 11 条

[1] SWITCHING PROCESSES IN ALLOYED PIN RECTIFIERS [J].

BENDA, H ;

HOFFMANN, A ;

SPENKE, E .

SOLID-STATE ELECTRONICS, 1965, 8 (12) :887-&

[2] REVERSE RECOVERY PROCESSES IN SILICON POWER RECTIFIERS [J].

BENDA, H ;

SPENKE, E .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1331-&

[3]

BENDA H, 1967, SOLIDST ELECTRON, V11

[4] POWER RECTIFIERS AND TRANSISTORS [J].

HALL, RN .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1512-1518

[5]

HERLET A, 1964, SIEMENS-Z, V38, P846

[6]

HERLET A, 1964, SIEMENS-Z, V38, P843

[7] SWITCHING PROCESSES IN ALLOYED PIN RECTIFIERS [J].

HOFFMAN, A ;

SPENKE, E .

SOLID-STATE ELECTRONICS, 1965, 8 (08) :693-&

[8] INFLUENCE OF DOPING CONCENTRATION ON SWITCHING PROCESSES IN PSN RECTIFIERS .2. EXPERIMENT [J].

PORST, A ;

SCHUSTER, K .

SOLID-STATE ELECTRONICS, 1967, 10 (12) :1149-&

[9] Simplified and advanced Theory of the Boundary Layer Rectifiers [J].

Schottky, W. .

ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10) :539-592

[10] VOLTAGE STEP AT SWITCHING OF ALLOYED PIN RECTIFIERS [J].

SCHUSTER, K ;

SPENKE, E .

SOLID-STATE ELECTRONICS, 1965, 8 (11) :881-&

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