INFLUENCE OF DOPING CONCENTRATION ON SWITCHING PROCESSES IN PSN RECTIFIERS .2. EXPERIMENT

被引：6

作者：

PORST, A

SCHUSTER, K

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 12期

关键词：

D O I：

10.1016/0038-1101(67)90057-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1149 / &

共 11 条

[1] SWITCHING PROCESSES IN ALLOYED PIN RECTIFIERS [J].

BENDA, H ;

HOFFMANN, A ;

SPENKE, E .

SOLID-STATE ELECTRONICS, 1965, 8 (12) :887-&

[2] REVERSE RECOVERY PROCESSES IN SILICON POWER RECTIFIERS [J].

BENDA, H ;

SPENKE, E .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1331-&

[3] INFLUENCE OF DOPING CONCENTRATION ON SWITCHING PROCESSES IN PSN RECTIFIERS .I. THEORY [J].

BENDA, H ;

DANNHAUSER, F ;

PORST, A ;

SPENKE, E .

SOLID-STATE ELECTRONICS, 1967, 10 (12) :1133-+

[4] POWER RECTIFIERS AND TRANSISTORS [J].

HALL, RN .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1512-1518

[5]

HERLET A, 1955, Z ANGEW PHYS, V7, P99

[6]

HERLET A, 1955, Z ANGEW PHYS, V7, P149

[7]

HERLET A, 1957, Z ANGEW PHYS, V9, P155

[8]

HERLET A, 1955, Z ANGEW PHYS, V7, P195

[9] SWITCHING PROCESSES IN ALLOYED PIN RECTIFIERS [J].

HOFFMAN, A ;

SPENKE, E .

SOLID-STATE ELECTRONICS, 1965, 8 (08) :693-&

[10] AN EXPERIMENTAL DETERMINATION OF THE CARRIER LIFETIME IN P-I-N DIODES FROM THE STORED CARRIER CHARGE [J].

HOFFMANN, A ;

SCHUSTER, K .

SOLID-STATE ELECTRONICS, 1964, 7 (10) :717-724

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