COMMENTS ON THE PLASMA ANNEALING MODEL TO EXPLAIN THE DYNAMICS OF PULSED LASER ANNEALING OF ION-IMPLANTED SILICON

被引：2

作者：

BHATTACHARYYA, A ^{[1
]}

STREETMAN, BG ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1261 / 1261

页数：1

相关论文

共 7 条

[1] THEORETICAL AND EXPERIMENTAL INVESTIGATION OF THE DYNAMICS OF PULSED LASER ANNEALING OF AMORPHOUS-SILICON
BHATTACHARYYA, A
STREETMAN, BG
HESS, K
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3611 - 3617
[2] CONWELL EM, 1967, SOLID STATE PHYSIC S, V9, P149
[3] SPONTANEOUS PHONON DECAY SELECTION RULE - N-PROCESS AND U-PROCESSES
LAX, M
HU, P
NARAYANAMURTI, V
[J]. PHYSICAL REVIEW B, 1981, 23 (06): : 3095 - 3097
[4] TIME-RESOLVED OPTICAL-TRANSMISSION OF PULSED LASER-IRRADIATED SILICON
LEE, MC
LO, HW
AYDINLI, A
COMPAAN, A
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (07) : 499 - 501
[5] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON
LO, HW
COMPAAN, A
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1604 - 1607
[6] MEASUREMENT OF LATTICE TEMPERATURE OF SILICON DURING PULSED LASER ANNEALING
STRITZKER, B
POSPIESZCZYK, A
TAGLE, JA
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (05) : 356 - 358
[7] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING
VANVECHTEN, JA
TSU, R
SARIS, FW
HOONHOUT, D
[J]. PHYSICS LETTERS A, 1979, 74 (06) : 417 - 421