PHOTOIONIZATION CROSS-SECTION OF THE DX CENTER IN SI-DOPED ALXGA1-XAS

[11] LEDEBO LA, 1986, SEMIINSULATING 3 5 M, P543

[12] MATHAN MI, 1983, J ELECTRON MATER, V12, P719

[13] MOONEY PM, UNPUB

[14] MOONEY PM, 1984, J APPL PHYS, V57, P1928

[15] MOONEY PM, 1985, MATER RES SOC S P, V46, P403

[16] MOONEY PM, 1986, SEMIINSULATING 3 5 M, P537

[17] MOONEY PM, 1986, 14TH P INT C DEF S 1, V10, P417

[18] THEORY OF THE DX CENTER IN ALXGA1-XAS AND GAAS CRYSTALS [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2664 - 2669

[19] PERSISTENT PHOTOCONDUCTIVITY IN ALGAAS-GAAS HETEROSTRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 167 - 169

[20] DX CENTER - CROSSOVER OF DEEP AND SHALLOW STATES IN SI-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1986, 33 (06): : 4320 - 4323

[11] LEDEBO LA, 1986, SEMIINSULATING 3 5 M, P543

[12] MATHAN MI, 1983, J ELECTRON MATER, V12, P719

[13] MOONEY PM, UNPUB

[14] MOONEY PM, 1984, J APPL PHYS, V57, P1928

[15] MOONEY PM, 1985, MATER RES SOC S P, V46, P403

[16] MOONEY PM, 1986, SEMIINSULATING 3 5 M, P537

[17] MOONEY PM, 1986, 14TH P INT C DEF S 1, V10, P417

[18] THEORY OF THE DX CENTER IN ALXGA1-XAS AND GAAS CRYSTALS [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2664 - 2669

[19] PERSISTENT PHOTOCONDUCTIVITY IN ALGAAS-GAAS HETEROSTRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 167 - 169

[20] DX CENTER - CROSSOVER OF DEEP AND SHALLOW STATES IN SI-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1986, 33 (06): : 4320 - 4323