STUDY OF PT-GAAS INTERFACE STATES

[1] INTERFACIAL STATES SPECTRUM OF A METAL-SILICON JUNCTION [J]. SOLID-STATE ELECTRONICS, 1976, 19 (01) : 73 - 75

[2] DETERMINATION OF DENSITY AND RELAXATION-TIME OF SILICON-METAL INTERFACIAL STATES [J]. SOLID-STATE ELECTRONICS, 1975, 18 (01) : 25 - 27

[3] BARRET C, UNPUBLISHED

[4] GAAS SCHOTTKY DIODES WITH NEAR-IDEAL CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (07): : 1121 - +

[5] RECOMBINATION VELOCITY EFFECTS ON CURRENT DIFFUSION AND IMREF IN SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (11) : 1149 - &

[6] CHARACTERIZATION OF INTERFACE STATES AT A AG-SI INTERFACE FROM CAPACITANCE MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3079 - 3084

[7] SURFACE-STATES IN GAAS TUNNEL MIS STRUCTURES [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 42 (02): : 483 - 488

[8] FREQUENCY DEPENDENCE OF IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES (SI-SIO2 T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 48 - &

[9] FORWARD IV CHARACTERISTICS OF PT-N-GAAS SCHOTTKY-BARRIER CONTACTS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (09) : 985 - 991

[10] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

[1] INTERFACIAL STATES SPECTRUM OF A METAL-SILICON JUNCTION [J]. SOLID-STATE ELECTRONICS, 1976, 19 (01) : 73 - 75

[2] DETERMINATION OF DENSITY AND RELAXATION-TIME OF SILICON-METAL INTERFACIAL STATES [J]. SOLID-STATE ELECTRONICS, 1975, 18 (01) : 25 - 27

[3] BARRET C, UNPUBLISHED

[4] GAAS SCHOTTKY DIODES WITH NEAR-IDEAL CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (07): : 1121 - +

[5] RECOMBINATION VELOCITY EFFECTS ON CURRENT DIFFUSION AND IMREF IN SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (11) : 1149 - &

[6] CHARACTERIZATION OF INTERFACE STATES AT A AG-SI INTERFACE FROM CAPACITANCE MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3079 - 3084

[7] SURFACE-STATES IN GAAS TUNNEL MIS STRUCTURES [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 42 (02): : 483 - 488

[8] FREQUENCY DEPENDENCE OF IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES (SI-SIO2 T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 48 - &

[9] FORWARD IV CHARACTERISTICS OF PT-N-GAAS SCHOTTKY-BARRIER CONTACTS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (09) : 985 - 991

[10] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +