EFFECT OF SPUTTER-ETCHING CONDITIONS ON THE BARRIER CHARACTERISTICS AND THE PROCESS-INDUCED DEFECTS IN (TI-W)/SI SCHOTTKY DIODES

被引：4

作者：

BAUZA, D ^{[1
]}

MALLARDEAU, C ^{[1
]}

MORAND, Y ^{[1
]}

机构：

[1] SGS THOMSON,F-38041 GRENOBLE,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90276-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：387 / 391

页数：5

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