CHARACTERIZATION OF RF SPUTTER-DEPOSITED TI-W SCHOTTKY-BARRIER DIODES IN BORON-DOPED SILICON

被引：13

作者：

PAZ, O

AURET, FD

WHITE, JF

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 07期

关键词：

D O I：

10.1149/1.2115944

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1712 / 1715

页数：4

共 17 条

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