PROSPECTS AND CHALLENGES FOR SI-GE STRAINED-LAYER EPITAXY

被引：3

作者：

PEARSALL, TP

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

THIN SOLID FILMS | 1990年 / 184卷

关键词：

D O I：

10.1016/0040-6090(90)90444-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two of the important developments in strained-layer epitaxy of SiGe structures are the demonstration of heterojunction bipolar can be increasing evidence that SiGe superlattices with direct band gap behavior can be made. The underlying materials growth technologies-limited-reaction chemical vapor deposition and molecular beam epitaxy of symmetrically strained structures-that have made these advances possible, are discussed wirh an eye toward future developments. © 1990.

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页码：451 / 459

页数：9

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共 20 条

[1] SILICON GERMANIUM STRAINED LAYER SUPERLATTICES [J].

ABSTREITER, G ;

EBERL, K ;

FRIESS, E ;

WEGSCHEIDER, W ;

ZACHAI, R .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :431-438

[2] GE-SI LAYERED STRUCTURES - ARTIFICIAL CRYSTALS AND COMPLEX CELL ORDERED SUPERLATTICES [J].

BEVK, J ;

MANNAERTS, JP ;

FELDMAN, LC ;

DAVIDSON, BA ;

OURMAZD, A .

APPLIED PHYSICS LETTERS, 1986, 49 (05) :286-288

[3] THE N-CHANNEL SIGE/SI MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

DAEMBKES, H ;

HERZOG, HJ ;

JORKE, H ;

KIBBEL, H ;

KASPAR, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :633-638

[4] EFFECT OF BUFFER-LAYER COMPOSITION ON NEW OPTICAL-TRANSITIONS IN SI/GE SHORT-PERIOD SUPERLATTICES [J].

GELL, MA .

PHYSICAL REVIEW B, 1988, 38 (11) :7535-7553

[5] GROWTH OF GESI/SI STRAINED-LAYER SUPERLATTICES USING LIMITED REACTION PROCESSING [J].

GRONET, CM ;

KING, CA ;

OPYD, W ;

GIBBONS, JF ;

WILSON, SD ;

HULL, R .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) :2407-2409

[6] THEORY OF OPTICAL-TRANSITIONS IN SI/GE(001) STRAINED-LAYER SUPERLATTICES [J].

HYBERTSEN, MS ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1987, 36 (18) :9683-9693

[7] SYMMETRICALLY STRAINED SI/GE SUPERLATTICES ON SI SUBSTRATES [J].

KASPER, E ;

KIBBEL, H ;

JORKE, H ;

BRUGGER, H ;

FRIESS, E ;

ABSTREITER, G .

PHYSICAL REVIEW B, 1988, 38 (05) :3599-3601

[8] SI/SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS PRODUCED BY LIMITED REACTION PROCESSING [J].

KING, CA ;

HOYT, JL ;

GRONET, CM ;

GIBBONS, JF ;

SCOTT, MP ;

TURNER, J .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (02) :52-54

[9] SELF-ALIGNED ALGAAS/GAAS HBT WITH LOW EMITTER RESISTANCE UTILIZING INGAAS CAP LAYER [J].

NAGATA, K ;

NAKAJIMA, O ;

YAMAUCHI, Y ;

NITTONO, T ;

ITO, H ;

ISHIBASHI, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) :2-7

[10] HOT-ELECTRON INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH FT OF 110-GHZ [J].

NOTTENBURG, RN ;

CHEN, YK ;

PANISH, MB ;

HUMPHREY, DA ;

HAMM, R .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (01) :30-32