IMPROVEMENT OF ALPHA-PARTICLE-INDUCED SOFT-ERROR IMMUNITY IN A GAAS SRAM BY A BURIED P-LAYER

被引：18

作者：

UMEMOTO, Y ^{[1
]}

MASUDA, N ^{[1
]}

SHIGETA, J ^{[1
]}

MITSUSADA, K ^{[1
]}

机构：

[1] HITACHI LTD,DEVICE DEV CTR,GAAS IC GRP,KODAIRA,TOKYO 187,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 03期

关键词：

D O I：

10.1109/16.2450

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：268 / 274

页数：7

共 14 条

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UMEMOTO, Y ;

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[10] EFFECTS OF A BURIED PARA-LAYER ON ALPHA-PARTICLE IMMUNITY OF MESFETS FABRICATED ON SEMIINSULATING GAAS SUBSTRATES [J].

UMEMOTO, Y ;

MASUDA, N ;

MITSUSADA, K .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) :396-397

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