STRETCHED EXPONENTIAL ILLUMINATION TIME-DEPENDENCE OF POSITIVE CHARGE AND SPIN GENERATION IN AMORPHOUS-SILICON NITRIDE

被引：33

作者：

KANICKI, J ^{[1
]}

SANKARAN, M ^{[1
]}

GELATOS, A ^{[1
]}

CROWDER, MS ^{[1
]}

TOBER, ED ^{[1
]}

机构：

[1] IBM CORP,DIV GEN PROD,SAN JOSE,CA 95193

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 07期

关键词：

D O I：

10.1063/1.104255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report for the first time on the stretched exponential time dependence of positive charge and spin generated by subband-gap ultraviolet illumination in gate-quality nitrogen-rich amorphous silicon nitride films. We have found that a stretched exponential function, which characterizes dispersive charge transport in silicon nitride, gives the best description of our experimental results. We also propose a mechanism which we believe is responsible for the creation of the positive charge and spin in the amorphous silicon nitride films.

引用

页码：698 / 700

页数：3

共 17 条

[1]

CROWDER MS, 1990, B AM PHYS SOC, V35, P349

[2] EVIDENCE FOR A NEGATIVE ELECTRON-ELECTRON CORRELATION-ENERGY IN THE DOMINANT DEEP TRAPPING CENTER IN SILICON-NITRIDE FILMS [J].