CATHODOLUMINESCENCE AND ELECTRON-BEAM IRRADIATION EFFECT OF POROUS SILICON STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY

被引：19

作者：

MITSUI, T ^{[1
]}

YAMAMOTO, N ^{[1
]}

TAKEMOTO, K ^{[1
]}

NITTONO, O ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT MET ENGN,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 3A期

关键词：

CATHODOLUMINESCENCE; POROUS SILICON; ELECTRON MICROSCOPY;

D O I：

10.1143/JJAP.33.L342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cathodoluminescence (CL) from n-type porous silicon was studied using the CL detection system combined with a transmission electron microscope. Two luminescence bands were observed with peaks at 420 nm and 660 nm. The 660 nm band peak decays more quickly with increasing accelerating voltage and decreasing temperature. The intensity profile along the cross-sectional trace shows that the 660 nm luminescence centers are mainly located near the top side of the porous layer. The 420 nm CL band was found at accelerating voltage higher than 160 kV at 20 K.

引用

页码：L342 / L344

页数：3

共 9 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[2] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON [J].

CULLIS, AG ;

CANHAM, LT .

NATURE, 1991, 353 (6342) :335-338

[3] EFFICIENT VISIBLE PHOTOLUMINESCENCE FROM POROUS SILICON [J].

KOSHIDA, N ;

KOYAMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (7B) :L1221-L1223

[4] VISIBLE ELECTROLUMINESCENCE FROM POROUS SILICON [J].

KOSHIDA, N ;

KOYAMA, H .

APPLIED PHYSICS LETTERS, 1992, 60 (03) :347-349

[5] VISIBLE PHOTOLUMINESCENCE OF POROUS SI AND ITS RELATED OPTICAL-PROPERTIES [J].

KOYAMA, H ;

ARAKI, M ;

YAMAMOTO, Y ;

KOSHIDA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B) :3606-3609

[6] MICROSTRUCTURE OF VISIBLE-LIGHT EMITTING POROUS SILICON [J].

NISHIDA, A ;

NAKAGAWA, K ;

KAKIBAYASHI, H ;

SHIMADA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (9A) :L1219-L1222

[7] STUDY OF LUMINESCENT REGION IN ANODIZED POROUS SILICONS BY PHOTOLUMINESCENCE IMAGING AND THEIR MICROSTRUCTURES [J].

NOGUCHI, N ;

SUEMUNE, I ;

YAMANISHI, M ;

HUA, GC ;

OTSUKA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (4B) :L490-L493

[8] CATHODOLUMINESCENCE FROM POROUS SILICON [J].

PILLAI, SM ;

XU, ZY ;

GAL, M ;

GLAISHER, R ;

PHILLIPS, M ;

COCKAYNE, D .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (12A) :L1702-L1703

[9] PHOTOLUMINESCENCE STUDIES ON POROUS SILICON [J].

XU, ZY ;

GAL, M ;

GROSS, M .

APPLIED PHYSICS LETTERS, 1992, 60 (11) :1375-1377

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