REDUCTION OF LATERAL ION STRAGGLING FOR THE FABRICATION OF INTERMIXED GAAS/A1GAAS QUANTUM WIRES

被引：4

作者：

PRINS, FE ^{[1
]}

LEHR, G ^{[1
]}

BURKARD, M ^{[1
]}

SCHWEIZER, H ^{[1
]}

SMITH, GW ^{[1
]}

机构：

[1] DRA MALVERN,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

关键词：

D O I：

10.1016/0168-583X(93)90691-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

To obtain steep lateral potentials for GaAs/AlGaAs quantum wires fabricated by the implantation induced intermixing technique it is important to reduce the lateral ion straggling during implantation to a minimum. In this paper we have realized wires varying implantation energy, distance from quantum well (QW) to the surface and ion species. The steepness of the resulting lateral potentials has been compared to values calculated by Monte Carlo simulations. It is shown that best results are obtained when the projected range R(p) slightly exceeds the distance between QW and the surface. According to theory, a very steep lateral potential is realized using a QW only 15 nm from the surface away. With increasing mass the steepness was not improved despite the from simulations expected decrease. Obviously the steepness was influenced by other properties of the implanted species.

引用

页码：827 / 830

页数：4

共 10 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].