PARALLEL BETWEEN SURFACE STATES AT SI-SIO2 INTERFACE AND B2 CENTER IN IRRADIATED SIO2

被引：14

作者：

HICKMOTT, TW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1972年 / 9卷 / 01期

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D O I：

10.1116/1.1316592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：311 / +

页数：1

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