HOT-CARRIER-INDUCED DEGRADATION IN NITRIDED OXIDE MOSFETS

被引：13

作者：

GUPTA, A

PRADHAN, S

ROENKER, KP

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 03期

关键词：

D O I：

10.1109/16.19970

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：577 / 588

页数：12

共 36 条

[1] MEASUREMENT OF MOSFET CONSTANTS [J].

DELAMONEDA, FH ;

KOTECHA, HN ;

SHATZKES, M .

ELECTRON DEVICE LETTERS, 1982, 3 (01) :10-12

[2] TRAPPING EFFECTS IN THIN OXYNITRIDE LAYERS IN METAL-INSULATOR-SEMICONDUCTOR DEVICES [J].

FAIGON, A ;

SHAPPIR, J .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4633-4637

[3] TRADEOFFS AND ELECTRON-TEMPERATURE CALCULATIONS IN LIGHTLY DOPED DRAIN STRUCTURES [J].

FREY, J ;

GOLDSMAN, N .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) :28-30

[4]

FU KY, 1987, IEEE ELECTR DEVICE L, V8, P132, DOI 10.1109/EDL.1987.26577

[5]

GUPTA A, UNPUB EFFECTIVE ELEV

[6] CORRELATION BETWEEN ELECTRON TRAP DENSITY AND HYDROGEN CONCENTRATION IN ULTRATHIN RAPIDLY REOXIDIZED NITRIDED OXIDES [J].

HORI, T ;

IWASAKI, H ;

YOSHIOKA, Y ;

SATO, M .

APPLIED PHYSICS LETTERS, 1988, 52 (09) :736-738

[7] ELECTRICAL AND PHYSICAL CHARACTERISTICS OF THIN NITRIDED OXIDES PREPARED BY RAPID THERMAL NITRIDATION [J].

HORI, T ;

IWASAKI, H ;

NAITO, Y ;

ESAKI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) :2238-2245

[8]

Hsu F.-C., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P96

[9] EFFECT OF FINAL ANNEALING ON HOT-ELECTRON-INDUCED MOSFET DEGRADATION [J].

HSU, FC ;

HUI, J ;

CHIU, KY .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) :369-371

[10] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].

HU, CM ;

TAM, SC ;

HSU, FC ;

KO, PK ;

CHAN, TY ;

TERRILL, KW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :375-385

← 1 2 3 4 →