EXPLOITING SI/COSI2/SI HETEROSTRUCTURES GROWN BY MESOTAXY

被引：19

作者：

WHITE, AE ^{[1
]}

SHORT, KT ^{[1
]}

MAEX, K ^{[1
]}

HULL, R ^{[1
]}

HSIEH, YF ^{[1
]}

AUDET, SA ^{[1
]}

GOOSSEN, KW ^{[1
]}

JACOBSON, DC ^{[1
]}

POATE, JM ^{[1
]}

机构：

[1] INTERUNIV MICROELECTR CTR,LOUVAIN,BELGIUM

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷

关键词：

D O I：

10.1016/0168-583X(91)95305-W

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Buried single-crystal silicide layers in silicon formed by ion implantation and annealing have many potential applications (some more practical than others!) including metal base transistors (operating at 77 K), buried collector contacts for bipolar transistors, and buried groundplanes for ultrahigh-speed electronics. Fabrication of prototype devices is complicated by the presence of defects in the overlayer silicon, but preliminary results are reported.

引用

页码：693 / 697

页数：5

共 18 条

[1]

Barbour J.C., 1988, MATER RES SOC S P, V107, P269

[2] FURNACE AND CW AR LASER-INDUCED SOLID-PHASE EPITAXIAL REGROWTH OF SOS FILMS IMPLANTED WITH SI, SI + B, P, AND P + B IONS [J].