PHOTOEMISSION-STUDIES OF HETEROJUNCTION INTERFACE FORMATION - GE-GAAS(110) AND GE-SI(111)

被引：23

作者：

MARGARITONDO, G

STOFFEL, NG

KATNANI, AD

EDELMAN, HS

BERTONI, CM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：784 / 786

页数：3

共 14 条

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[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[2] SURFACE-REACTIONS AND INTERDIFFUSION
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[3] GE-GAAS(110) INTERFACE FORMATION
BAUER, RS
MCMENAMIN, JC
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[4] NEAR-IR DETECTION BY PBS-GAAS HETEROJUNCTIONS
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[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 15 (02): : 621 - 627
[5] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[6] ELEMENTARY THEORY OF HETEROJUNCTIONS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021
[7] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES
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CHIANG, TC
EASTMAN, DE
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (13) : 1112 - 1115
[8] PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA - APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS
KRAUT, EA
GRANT, RW
WALDROP, JR
KOWALCZYK, SP
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1620 - 1623
[9] SURFACE SPECTROSCOPY OF SCHOTTKY-BARRIER FORMATION ON SI(111) 7X7 - PHOTOEMISSION STUDIES OF FILLED SURFACE-STATES AND BAND BENDING
MARGARITONDO, G
ROWE, JE
CHRISTMAN, SB
[J]. PHYSICAL REVIEW B, 1976, 14 (12): : 5396 - 5403
[10] MARGARITONDO G, UNPUBLISHED