HIGH-POWER OPERATION OF ALGAAS/GAAS LARGE-OPTICAL-CAVITY LASER DIODE WITH ZNSXSE1-X(X=0.06) LAYER GROWN BY ADDUCT-SOURCE METALORGANIC CHEMICAL VAPOR-DEPOSITION METHOD

被引：2

作者：

TSUNEKAWA, Y

WATANABE, K

SEKI, T

ASAKA, T

YAMASAKI, Y

TAKAMURA, T

IWANO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 11期

关键词：

D O I：

10.1143/JJAP.28.L2085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2085 / L2088

页数：4

共 12 条

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