GAALAS LASER-DIODES WITH METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN ZNSE LAYER FOR INJECTION BLOCKING AND OPTICAL CONFINEMENT

被引：10

作者：

IWANO, H

TSUNEKAWA, Y

SHIMADA, M

TAKAMURA, T

SEKI, T

OHSHIMA, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 12期

关键词：

D O I：

10.1063/1.98841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：877 / 879

页数：3

共 11 条

[1] SINGLE-LONGITUDINAL-MODE METALORGANIC CHEMICAL-VAPOR-DEPOSITION SELF-ALIGNED GAALAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS [J].

COLEMAN, JJ ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :262-263

[2] SINGLE-MODE, HIGH-POWER GAALAS/GAAS LASERS [J].

FU, RJ ;

HWANG, CJ ;

WANG, CS ;

LALEVIC, B .

APPLIED PHYSICS LETTERS, 1984, 45 (07) :716-718

[3] SELECTIVE MOCVD GROWTH FOR APPLICATION TO GAAS/ALGAAS BURIED HETEROSTRUCTURE LASERS [J].

IWASAKI, T ;

MATSUO, N ;

MATSUMOTO, N ;

KASHIWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01) :L66-L69

[4]

KANENO N, 1986, 18TH INT C SOL STAT, P173

[5] COMPLEMENTARY SELF-ALIGNED LASER BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

MAWST, LJ ;

COSTRINI, G ;

ZMUDZINSKI, CA ;

GIVENS, ME ;

EMANUEL, MA ;

COLEMAN, JJ .

ELECTRONICS LETTERS, 1985, 21 (20) :903-905

[6] GROWTH-KINETICS IN THE MOVPE OF ZNSE ON GAAS USING ZINC AND SELENIUM ALKYLS [J].

MITSUHASHI, H ;

MITSUISHI, I ;

KUKIMOTO, H .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :219-222

[7] VERY LOW-THRESHOLD SEPARATE-CONFINEMENT-HETEROSTRUCTURE LASERS PREPARED BY LIQUID-PHASE EPITAXY [J].

MUKAI, S ;

TSUNEKAWA, Y ;

TAKABE, Y ;

YAJIMA, H .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :1052-1053

[8]

NAGASAKA H, 1985, 17TH INT C SOL STAT, P67

[9] A BURIED-CAP PLANAR STRIPE (BCP) GAALAS LASER WITH ZNSE CURRENT-CONFINEMENT REGION BY MBE [J].

NIINA, T ;

YAMAGUCHI, T ;

YODOSHI, K ;

YAGI, K ;

HAMADA, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :1021-1025

[10] HIGH-POWER OPERATION OF INDEX-GUIDED VISIBLE GAAS/GAALAS MULTIQUANTUM WELL LASERS [J].

UOMI, K ;

NAKATSUKA, S ;

OHTOSHI, T ;

ONO, Y ;

CHINONE, N ;

KAJIMURA, T .

APPLIED PHYSICS LETTERS, 1984, 45 (08) :818-820

← 1 2 →