MICRODEFECTS IN A NON-STRIATED DISTRIBUTION IN FLOATING-ZONE SILICON-CRYSTALS

被引：106

作者：

ROKSNOER, PJ

VANDENBOOM, MMB

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 53卷 / 03期

关键词：

D O I：

10.1016/0022-0248(81)90140-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：563 / 573

页数：11

共 26 条

[1] TEM OBSERVATION OF DISLOCATION LOOPS CORRELATED WITH INDIVIDUAL SWIRL DEFECTS IN AS-GROWN SILICON [J].

BERNEWITZ, LI ;

KOLBESEN, BO ;

MAYER, KR ;

SCHUH, GE .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :277-279

[2] GROWTH OF 40 MM DIAMETER SILICON CRYSTALS BY A PEDESTAL TECHNIQUE USING ELECTRON-BEAM HEATING [J].

CISZEK, TF .

JOURNAL OF CRYSTAL GROWTH, 1972, 12 (04) :281-+

[3] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :459-474

[4]

de Kock A. J. R., 1973, Journal of Applied Physics, V44, P2816, DOI 10.1063/1.1662656

[5] EFFECT OF DOPING ON MICRODEFECT FORMATION IN AS-GROWN DISLOCATION-FREE CZOCHRALSKI SILICON-CRYSTALS [J].

DEKOCK, AJR ;

STACY, WT ;

VANDEWIJGERT, WM .

APPLIED PHYSICS LETTERS, 1979, 34 (09) :611-613

[6] EFFECT OF GROWTH PARAMETERS ON FORMATION AND ELIMINATION OF VACANCY CLUSTERS IN DISLOCATION-FREE SILICON-CRYSTALS [J].

DEKOCK, AJR ;

ROKSNOER, PJ ;

BOONEN, PGT .

JOURNAL OF CRYSTAL GROWTH, 1974, 22 (04) :311-320

[7] INTRODUCTION OF DISLOCATIONS DURING GROWTH OF FLOATING-ZONE SILICON-CRYSTALS AS A RESULT OF POINT-DEFECT CONDENSATION [J].

DEKOCK, AJR ;

ROKSNOER, PJ ;

BOONEN, PGT .

JOURNAL OF CRYSTAL GROWTH, 1975, 30 (03) :279-294

[8]

DEKOCK AJR, 1973, PHILIPS RES REPT S1

[9]

DEKOCK AJR, 1977, SEMICONDUCTOR SILICO, P508

[10]

DERUITER JW, COMMUNICATION

← 1 2 3 →