IMPROVED HOT-CARRIER RESISTANCE WITH FLUORINATED GATE OXIDES

被引：41

作者：

MACWILLIAMS, KP

HALLE, LF

ZIETLOW, TC

机构：

[1] Aerospace Corporation, Los Angeles

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 01期

关键词：

D O I：

10.1109/55.46912

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Improved OFF-state hot-carrier resistance in n-channel MOSFET’s has been observed for fluorinated gate oxides. One micrometer fluorinated devices consistently showed approximately three times smaller transconductance reduction and threshold-voltage shift relative to the control (nonfluorinated) MOSFET’s. The fluorine was incorporated into the gate oxide by low-energy ion implantation followed by a 920°C diffusion. Subthreshold measurements taken before and after hot-electron stress explicitly show the reduction in interface state generation with fluorine incorporation. © 1990 IEEE

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页码：3 / 5

页数：3

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