SUBQUARTER-MICROMETER GATE-LENGTH P-CHANNEL AND N-CHANNEL MOSFETS WITH EXTREMELY SHALLOW SOURCE-DRAIN JUNCTIONS

被引:27
作者
MIYAKE, M [1 ]
KOBAYASHI, T [1 ]
OKAZAKI, Y [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO, TOKYO 180, JAPAN
关键词
D O I
10.1109/16.19941
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:392 / 398
页数:7
相关论文
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