STUDY OF OXIDIZED SILICON BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：11

作者：

HILL, JM

ROYCE, DG

MEHTA, M

FADLEY, CS

WAGNER, LF

GRUNTHER, FJ

机构：

[1] UNIV HAWAII,DEPT PHYS,HONOLULU,HI 96822

[2] CALTECH,JET PROP LAB,PASADENA,CA 91103

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 01期

关键词：

D O I：

10.1116/1.569211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：376 / 377

页数：2

共 8 条

[1]

Fadley C. S., 1976, Progress in Solid State Chemistry, V11, P265, DOI 10.1016/0079-6786(76)90013-3

[2] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON [J].

FLITSCH, R ;

RAIDER, SI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :305-308

[3]

HILL JBH, THESIS

[4]

HILL JM, IN PRESS

[5] X-RAY PHOTOELECTRON-SPECTROSCOPY OF THERMALLY GROWN SILICON DIOXIDE FILMS ON SILICON [J].

HOLLINGER, G ;

JUGNET, Y ;

PERTOSA, P ;

DUC, TM .

CHEMICAL PHYSICS LETTERS, 1975, 36 (04) :441-445

[6]

MEHTA M, UNPUBLISHED

[7] STOICHIOMETRY OF SIO2-SI INTERFACIAL REGIONS .1. ULTRATHIN OXIDE-FILMS [J].

RAIDER, SI ;

FLITSCH, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :58-58

[8] OXIDE-GROWTH ON ETCHED SILICON IN AIR AT ROOM-TEMPERATURE [J].

RAIDER, SI ;

FLITSCH, R ;

PALMER, MJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :413-418

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