EFFECT OF CARRIER LIFETIME ON MODE PARTITION NOISE IN MULTIMODE SEMICONDUCTOR-LASERS

The dependence of mode partition noise (MPN), and its association with the eye diagram and power penalty, on carrier lifetime in 1.3 mum InGaAsP multimode semiconductor lasers for a 1.2 Gbit/s lightwave transmission system was investigated. It was found that lasers with shorter carrier lifetimes showed less MPN, and hence, a better eye opening and a lower power penalty, than the lasers with longer carrier lifetimes. The significant dependence of MPN, eye opening, and power penalty on carrier lifetime in multimode semiconductor lasers suggests that the carrier lifetime of the laser, which depends on the laser design, can be used as an important parameter for characterizing the performance of high-speed lightwave transmission systems.