PLASMA-ASSISTED ETCHING OF ALUMINUM IN CCL4-CL2 MIXTURES

被引:6
作者
DAGOSTINO, R
CAPEZZUTO, P
CRAMAROSSA, F
FRACASSI, F
机构
关键词
D O I
10.1007/BF01023917
中图分类号
TQ [化学工业];
学科分类号
0817 ;
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页码:513 / 525
页数:13
相关论文
共 24 条
[1]   END-POINT DETERMINATION OF ALUMINUM CCL4 PLASMA ETCHING BY OPTICAL EMISSION-SPECTROSCOPY [J].
CURTIS, BJ ;
BRUNNER, HJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) :829-830
[2]  
CURTIS BJ, 1980, SOLID STATE TECHNOL, V22, P129
[3]  
d'Agostino R., 1984, Plasma Chemistry and Plasma Processing, V4, P165, DOI 10.1007/BF00566839
[4]   THE EFFECT OF TEMPERATURE AND FLOW-RATE ON ALUMINUM ETCH RATES IN RF PLASMAS [J].
DANNER, DA ;
HESS, DW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (01) :151-155
[5]  
Hess D.W., 1982, PLASMA CHEM PLASMA P, V2, P141, DOI [10.1007/BF00633130, DOI 10.1007/BF00633130]
[6]  
HESS DW, 1981, SOLID STATE TECHNOL, V24, P189
[7]  
HESS DW, 1984, DRY ETCHING MICROELE, P1
[8]   ALUMINUM REACTIVE ION ETCHING EMPLOYING CCL4+CL2 MIXTURE [J].
HORIIKE, Y ;
YAMAZAKI, T ;
SHIBAGAKI, M ;
KURISAKI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10) :1412-1420
[9]  
HORIIKE Y, 1982, JPN J APPL PHYS, V521, P1412
[10]  
IBBOTSON DE, 1983, 6TH P INT S PLASM CH, P588