SYNCHROTRON RADIATION X-RAY-LITHOGRAPHY FABRICATION OF 0.35 MU-M GATE-LENGTH N-TYPE METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

被引：4

作者：

BLACKWELL, RJ ^{[1
]}

BAKER, JW ^{[1
]}

WELLS, GM ^{[1
]}

HANSEN, M ^{[1
]}

WALLACE, J ^{[1
]}

CERRINA, F ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR XRAY LITHOG,STOUGHTON,WI 53589

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.585041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：439 / 445

页数：7

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