CHARACTERIZATION OF DIAZO-TYPE PHOTORESISTS USING E-BEAM EXPOSURE AND METAL ION-FREE DEVELOPERS

被引：3

作者：

YAMASHITA, H

TODOKORO, Y

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583087

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1004 / 1008

页数：5

共 10 条

[1] CHARACTERIZATION OF AZ-2415 AS A NEGATIVE ELECTRON RESIST [J].

BERKER, TD ;

CASEY, DD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :524-530

[2]

JOHNSON A, 1982, P KODAK MICROELECTRO, P60

[3] NEGATIVE PATTERNING OF AZ1350J BY ELECTRON-BEAM DESENSITIZATION OF PHOTO-SENSITIVE COMPOUND [J].

MOCHIJI, K ;

MARUYAMA, Y ;

MURAI, F ;

OKAZAKI, S ;

TAKEDA, Y ;

ASAI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :63-67

[4] HIGH-RESOLUTION, STEEP PROFILE RESIST PATTERNS [J].

MORAN, JM ;

MAYDAN, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1620-1624

[5]

MORI K, 1981, S VLSI TECHNOLOGY, P12

[6] NEW DIMENSIONS IN OPTICAL LITHOGRAPHY [J].

OLDHAM, WG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2176-2176

[7] PERFORMANCE-CHARACTERISTICS OF DIAZO-TYPE PHOTORESISTS UNDER E-BEAM AND OPTICAL EXPOSURE [J].

SHAW, JM ;

HATZAKIS, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (04) :425-430

[8] DEVELOPER TEMPERATURE EFFECTS ON E-BEAM AND OPTICALLY EXPOSED POSITIVE PHOTORESIST [J].

SHAW, JM ;

HATZAKIS, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) :2026-2031

[9] NOVEL TRIPLE-LAYER RESIST SYSTEM [J].

TODOKORO, Y .

ELECTRONICS LETTERS, 1982, 18 (13) :543-544

[10]

Watts R. K., 1980, International Electron Devices Meeting. Technical Digest, P772

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