CHARACTERIZATION OF AZ-2415 AS A NEGATIVE ELECTRON RESIST

[1] BROYDE B, 1970, 4 P INT C EL ION BEA, P575

[2] MODEL FOR EXPOSURE OF ELECTRON-SENSITIVE RESISTS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (06): : 1056 - 1059

[3] HATZAKIS M, 1978, 8 P INT C EL ION BEA, P285

[4] ELECTRON BEAM-INDUCED REACTIONS OF ORTHONAPHTHOQUINONE-DIAZIDE-SULFONYL DERIVATIVES IN PHENOLIC-TYPE RESINS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) : 860 - 865

[5] NEW DIMENSIONS IN OPTICAL LITHOGRAPHY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2176 - 2176

[6] PHOTO-CHEMICAL DECOMPOSITION MECHANISMS FOR AZ-TYPE PHOTORESISTS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 42 - 55

[7] PERFORMANCE-CHARACTERISTICS OF DIAZO-TYPE PHOTORESISTS UNDER E-BEAM AND OPTICAL EXPOSURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (04) : 425 - 430

[8] POLYMER RESIST SYSTEMS FOR PHOTOLITHOGRAPHY AND ELECTRON LITHOGRAPHY [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1976, 6 : 267 - 301

[1] BROYDE B, 1970, 4 P INT C EL ION BEA, P575

[2] MODEL FOR EXPOSURE OF ELECTRON-SENSITIVE RESISTS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (06): : 1056 - 1059

[3] HATZAKIS M, 1978, 8 P INT C EL ION BEA, P285

[4] ELECTRON BEAM-INDUCED REACTIONS OF ORTHONAPHTHOQUINONE-DIAZIDE-SULFONYL DERIVATIVES IN PHENOLIC-TYPE RESINS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) : 860 - 865

[5] NEW DIMENSIONS IN OPTICAL LITHOGRAPHY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2176 - 2176

[6] PHOTO-CHEMICAL DECOMPOSITION MECHANISMS FOR AZ-TYPE PHOTORESISTS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 42 - 55

[7] PERFORMANCE-CHARACTERISTICS OF DIAZO-TYPE PHOTORESISTS UNDER E-BEAM AND OPTICAL EXPOSURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (04) : 425 - 430

[8] POLYMER RESIST SYSTEMS FOR PHOTOLITHOGRAPHY AND ELECTRON LITHOGRAPHY [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1976, 6 : 267 - 301