SILICON MOLECULAR-BEAM EPITAXY WITH ANTIMONY ION DOPING

被引：52

作者：

SUGIURA, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 05期

关键词：

D O I：

10.1063/1.327993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2630 / 2633

页数：4

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