THRESHOLD SWITCHING IN CHALCOGENIDE-GLASS THIN-FILMS

被引：432

作者：

ADLER, D

SHUR, MS

SILVER, M

OVSHINSKY, SR

机构：

[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514

[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

[3] ENERGY CONVERS DEVICES INC,TROY,MI 48084

[4] UNIV MINNESOTA,DEPT GERIATR MED,MINNEAPOLIS,MN 55455

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 06期

关键词：

D O I：

10.1063/1.328036

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3289 / 3309

页数：21

共 92 条

[51] LOCALIZED STATES IN GAP OF AMORPHOUS-SEMICONDUCTORS [J].

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1976, 36 (24) :1469-1472

[52]

OVSHINSKY SR, 1975, 4TH P INT C REPR INF

[53]

OVSHINSKY SR, 1976, 6TH P INT C STRUCT P, P426

[54] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J].

PADOVANI, FA ;

STRATTON, R .

SOLID-STATE ELECTRONICS, 1966, 9 (07) :695-&

[55] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J].

PAUL, W ;

LEWIS, AJ ;

CONNELL, GAN ;

MOUSTAKAS, TD .

SOLID STATE COMMUNICATIONS, 1976, 20 (10) :969-972

[56] STATE OF AMORPHOUS THRESHOLD SWITCHES [J].

PETERSEN, KE ;

ADLER, D .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) :256-263

[57] ON-STATE CHARACTERISTICS OF AMORPHOUS-CRYSTALLINE HETEROJUNCTIONS [J].

PETERSEN, KE ;

ADLER, D .

APPLIED PHYSICS LETTERS, 1974, 25 (04) :211-213

[58] AMORPHOUS-CRYSTALLINE HETEROJUNCTION TRANSISTORS [J].

PETERSEN, KE ;

ADLER, D ;

SHAW, MP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) :471-477

[59]

PETERSEN KE, 1977, AMORPHOUS LIQUID SEM, P707

[60]

PETERSEN KE, 1979, J APPL PHYS, V50

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