THE ETCHING MECHANISM OF TITANIUM POLYCIDE IN A MIXTURE OF SF6 AND O2

[1] A KINETIC-MODEL FOR PLASMA-ETCHING SILICON IN A SF6/O2 RF DISCHARGE [J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 1986, 14 (02) : 156 - 164

[2] BEINVOGL W, 1981, SEMICONDUCTOR SILICO, P648

[3] BOBBIO SM, 1987, MAT RES SOC S P, V98, P243

[4] DRY ETCHING OF TISI2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 739 - 743

[5] Chapman B., 1980, GLOW DISCHARGE PROCE

[6] PLASMA-ETCHING OF REFRACTORY GATES FOR VLSI APPLICATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2325 - 2335

[7] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619

[8] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3134 - 3136

[9] PLASMA-ETCHING OF SI AND SIO2 IN SF6-O2 MIXTURES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 162 - 167

[10] DAGOSTINO R, 1981, PLASMA CHEM PLASMA P, V1, P365

[1] A KINETIC-MODEL FOR PLASMA-ETCHING SILICON IN A SF6/O2 RF DISCHARGE [J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 1986, 14 (02) : 156 - 164

[2] BEINVOGL W, 1981, SEMICONDUCTOR SILICO, P648

[3] BOBBIO SM, 1987, MAT RES SOC S P, V98, P243

[4] DRY ETCHING OF TISI2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 739 - 743

[5] Chapman B., 1980, GLOW DISCHARGE PROCE

[6] PLASMA-ETCHING OF REFRACTORY GATES FOR VLSI APPLICATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2325 - 2335

[7] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619

[8] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3134 - 3136

[9] PLASMA-ETCHING OF SI AND SIO2 IN SF6-O2 MIXTURES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 162 - 167

[10] DAGOSTINO R, 1981, PLASMA CHEM PLASMA P, V1, P365