SCHOTTKY-BARRIER AT A MO-GAAS CONTACT

被引：6

作者：

BATEV, PM

IVANOVITCH, MD

KAFEDJIISKA, EI

SIMEONOV, SS

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1980年 / 48卷 / 06期

关键词：

Compendex;

D O I：

10.1080/00207218008901133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER

引用

页码：511 / 517

页数：7

共 13 条

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