THE INFLUENCE OF ILLUMINATION ON THE MAJORITY-CARRIER QUASI-FERMI-LEVEL IN THE SCHOTTKY-BARRIER DIODE

被引：8

作者：

HEASELL, EL

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 10期

关键词：

D O I：

10.1016/0038-1101(81)90108-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：889 / 895

页数：7

共 10 条

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