RECOMBINATION BENEATH OHMIC CONTACTS AND ADJACENT OXIDE COVERED REGIONS

被引：10

作者：

HEASELL, EL

机构：

[1] Electrical Engineering Department, University of Waterloo, Waterloo, Ont.

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 01期

关键词：

D O I：

10.1016/0038-1101(79)90177-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By modelling a contact as a Schottky barrier space-charge region it is possible to calculate the effective surface-recombination velocity which it displays. Such a model is of use in analysing the behaviour of thin emitter regions, and of contacts, or oxide covered regions in the extrinsic base of I2L vertical transistors. It is shown necessary to take account of both the doping and electric field dependence of the carrier mobility as well as the exact form of the potential at the boundary between the space-charge region and the substrate. The values of surface recombination velocity predicted by the model are in fair agreement with available data, and a tentative model for recombination beneath an oxide is proposed. © 1979.

引用

页码：89 / 93

页数：5

共 24 条

[1]

BERGER H, 1975, ESSDERC, V75, P164

[2] INJECTION MODEL - STRUCTURE-ORIENTED MODEL FOR MERGED TRANSISTOR LOGIC (MTL) [J].