IDENTIFICATION AND ELIMINATION OF GATE OXIDE DEFECT ORIGIN PRODUCED DURING SELECTIVE FIELD OXIDATION

被引:10
作者
ITSUMI, M [1 ]
KIYOSUMI, F [1 ]
机构
[1] OKI ELECT IND CO LTD,DIV ELECTRON DEVICE,TOKYO 193,JAPAN
关键词
D O I
10.1149/1.2123974
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:800 / 806
页数:7
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