IDENTIFICATION AND ELIMINATION OF GATE OXIDE DEFECT ORIGIN PRODUCED DURING SELECTIVE FIELD OXIDATION

被引：10

作者：

ITSUMI, M ^{[1
]}

KIYOSUMI, F ^{[1
]}

机构：

[1] OKI ELECT IND CO LTD,DIV ELECTRON DEVICE,TOKYO 193,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 04期

关键词：

D O I：

10.1149/1.2123974

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：800 / 806

页数：7

共 20 条

[1]

APPELS JA, 1970, PHILIPS RES REP, V25, P118

[2]

APPELS JA, 1971, PHILIPS RES REP, V26, P157

[3] 64-KBIT DYNAMIC MOS RAM [J].

ARAI, E ;

IEDA, N .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (03) :333-338

[4] TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2 [J].

BASSOUS, E ;

YU, HN ;

MANISCALCO, V .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1729-1737

[5] PROPERTIES OF SIXOYNZ FILMS ON SI [J].

BROWN, DM ;

GRAY, PV ;

HEUMANN, FK ;

PHILIPP, HR ;

TAFT, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :311-&

[6] EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J].

CHOU, NJ ;

ELDRIDGE, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1287-+

[7] CONVERSION OF SILICON NITRIDE INTO SILICON DIOXIDE THROUGH INFLUENCE OF OXYGEN [J].

FRANZ, I ;

LANGHEINRICH, W .

SOLID-STATE ELECTRONICS, 1971, 14 (06) :499-+

[8]

KERN W, 1970, RCA REV, V31, P187

[9]

KERN W, 1973, RCA REV, V34, P655

[10] FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS [J].

KOOI, E ;

VANLIEROP, JG ;

APPELS, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) :1117-1120

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