TUNGSTEN ETCHING MECHANISMS IN CF4/O-2 REACTIVE ION ETCHING PLASMAS

[1] A COMPARISON OF TUNGSTEN FILM DEPOSITION TECHNIQUES FOR VERY LARGE-SCALE INTEGRATION TECHNOLOGY [J]. THIN SOLID FILMS, 1987, 153 : 469 - 478

[2] AHN KY, 1986, 1985 P WORKSH TUNGST, P239

[3] ETCHING OF TUNGSTEN WITH XEF2 - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) : 4587 - 4590

[4] SELECTIVE DRY ETCHING OF TUNGSTEN FOR VLSI METALLIZATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (10) : 2113 - 2118

[5] PLASMA-ASSISTED ETCHING OF TUNGSTEN FILMS - A QUARTZ-CRYSTAL MICROBALANCE STUDY [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1758 - 1761

[6] HESS DW, 1988, SOLID STATE TECHNOL, V31

[7] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3796 - 3803

[8] SILICON ETCHING MECHANISMS IN A CF4/H2 GLOW-DISCHARGE [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 662 - 672

[9] COMPETITIVE REACTIONS OF FLUORINE AND OXYGEN WITH W, WSI2, AND SI SURFACES IN REACTIVE ION ETCHING USING CF4/O2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 1035 - 1041

[10] SURFACE PROCESSES IN CF4/O2 REACTIVE ETCHING OF SILICON [J]. APPLIED PHYSICS LETTERS, 1988, 52 (14) : 1170 - 1172

[1] A COMPARISON OF TUNGSTEN FILM DEPOSITION TECHNIQUES FOR VERY LARGE-SCALE INTEGRATION TECHNOLOGY [J]. THIN SOLID FILMS, 1987, 153 : 469 - 478

[2] AHN KY, 1986, 1985 P WORKSH TUNGST, P239

[3] ETCHING OF TUNGSTEN WITH XEF2 - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) : 4587 - 4590

[4] SELECTIVE DRY ETCHING OF TUNGSTEN FOR VLSI METALLIZATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (10) : 2113 - 2118

[5] PLASMA-ASSISTED ETCHING OF TUNGSTEN FILMS - A QUARTZ-CRYSTAL MICROBALANCE STUDY [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1758 - 1761

[6] HESS DW, 1988, SOLID STATE TECHNOL, V31

[7] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3796 - 3803

[8] SILICON ETCHING MECHANISMS IN A CF4/H2 GLOW-DISCHARGE [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 662 - 672

[9] COMPETITIVE REACTIONS OF FLUORINE AND OXYGEN WITH W, WSI2, AND SI SURFACES IN REACTIVE ION ETCHING USING CF4/O2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 1035 - 1041

[10] SURFACE PROCESSES IN CF4/O2 REACTIVE ETCHING OF SILICON [J]. APPLIED PHYSICS LETTERS, 1988, 52 (14) : 1170 - 1172