TRAPPING TIME IN PROCESSED POLYCRYSTALLINE SILICON MEASURED BY PICOSECOND TIME-RESOLVED REFLECTIVITY

被引：6

作者：

BAMBHA, NK

NIGHAN, WL

CAMPBELL, IH

FAUCHET, PM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 07期

关键词：

D O I：

10.1063/1.341047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2316 / 2321

页数：6

共 22 条

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[7]

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