OBSERVATION OF A NOVEL RELAXATION PROCESS ASSOCIATED WITH ELECTRONIC-TRANSITIONS FROM DEEP (D) DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引：46

作者：

COHEN, JD

LEEN, TM

RASMUSSEN, RJ

机构：

[1] Department of Physics, University of Oregon, Eugene

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.69.3358

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Junction capacitance transient measurements were employed to study the thermal emission of electrons trapped in deep (D) defects in lightly n-doped a-Si:H samples. We conclude that a novel defect relaxation process occurs upon a change of charge state of the defect such that an electron's thermal release rate is inversely proportional to its residence time in the defect. Supplemental spin transient measurements indicate that both D-/D0 and D0/D+ transitions must be involved. A good fit to our data is obtained if we assume a non-Markovian process for the D0/D+ transition.

引用

页码：3358 / 3361

页数：4

共 19 条

[1] DANGLING BOND IN A SI-H
BARYAM, Y
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2203 - 2206
[2] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE
BRODSKY, MH
TITLE, RS
[J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &
[3] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY
COHEN, JD
HARBISON, JP
WECHT, KW
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112
[4] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES
COHEN, JD
LANG, DV
[J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5321 - 5350
[5] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON
DERSCH, H
STUKE, J
BEICHLER, J
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01): : 265 - 274
[6] EXPERIMENTAL-EVIDENCE FOR ZERO-CORRELATION-ENERGY DEEP DEFECTS IN INTRINSIC HYDROGENATED AMORPHOUS-SILICON
ESSICK, JM
COHEN, JD
[J]. PHYSICAL REVIEW LETTERS, 1990, 64 (25) : 3062 - 3065
[7] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
JACKSON, WB
AMER, NM
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562
[8] IDENTIFICATION OF DEEP-GAP STATES IN ALPHA-SI-H BY PHOTODEPOPULATION-INDUCED ELECTRON-SPIN RESONANCE
JOHNSON, NM
BIEGELSEN, DK
[J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4066 - 4069
[9] A-SI-H GAP STATES INVESTIGATED BY CPM AND SCLC
KOCKA, J
VANECEK, M
SCHAUER, F
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 715 - 722
[10] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY
LANG, DV
COHEN, JD
HARBISON, JP
[J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320

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