REACTIVE SCHOTTKY-BARRIER FORMATION - THE PD-SI INTERFACE

[11] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612

[12] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1120 - 1124

[13] NEW PHENOMENA IN SCHOTTKY-BARRIER FORMATION ON III-V-COMPOUNDS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1332 - 1339

[14] ELECTRONIC-STRUCTURE OF A METAL-SEMICONDUCTOR INTERFACE [J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2461 - 2469

[15] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &

[16] PHENOMENOLOGY OF METAL-SEMICONDUCTOR ELECTRICAL BARRIERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 935 - 942

[17] MILLER, 1980, J VAC SCI TECHNOL, V17, P920

[18] SOME NOTES ON PALLADIUM-SILICON SYSTEM [J]. ACTA CHEMICA SCANDINAVICA, 1966, 20 (09): : 2381 - &

[19] CONTACT REACTIONS IN PD-GAAS JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 955 - 962

[20] THERMALLY INDUCED ACCUMULATION OF SILICON ON PALLADIUM SILICIDE SURFACES AS STUDIED BY AUGER-ELECTRON SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 705 - 706

[11] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612

[12] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1120 - 1124

[13] NEW PHENOMENA IN SCHOTTKY-BARRIER FORMATION ON III-V-COMPOUNDS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1332 - 1339

[14] ELECTRONIC-STRUCTURE OF A METAL-SEMICONDUCTOR INTERFACE [J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2461 - 2469

[15] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &

[16] PHENOMENOLOGY OF METAL-SEMICONDUCTOR ELECTRICAL BARRIERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 935 - 942

[17] MILLER, 1980, J VAC SCI TECHNOL, V17, P920

[18] SOME NOTES ON PALLADIUM-SILICON SYSTEM [J]. ACTA CHEMICA SCANDINAVICA, 1966, 20 (09): : 2381 - &

[19] CONTACT REACTIONS IN PD-GAAS JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 955 - 962

[20] THERMALLY INDUCED ACCUMULATION OF SILICON ON PALLADIUM SILICIDE SURFACES AS STUDIED BY AUGER-ELECTRON SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 705 - 706