EFFECT OF HYDROGEN GAS ON C-AXIS ORIENTED ALN FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING

被引：38

作者：

TAKEDA, F ^{[1
]}

MORI, T ^{[1
]}

TAKAHASHI, T ^{[1
]}

机构：

[1] TOYAMA UNIV,FAC TECHNOL,TAKAOKA 933,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.20.L169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L169 / L172

页数：4

共 10 条

[1] DIELECTRIC PROPERTIES OF REACTIVELY SPUTTERED FILMS OF ALUMINUM NITRIDE
NOREIKA, AJ
FRANCOMBE, MH
ZEITMAN, SA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (01): : 194 - +
[2] OPTICAL-ABSORPTION EDGE OF SINGLE-CRYSTAL AIN PREPARED BY A CLOSE-SPACED VAPOR PROCESS
PERRY, PB
RUTZ, RF
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 319 - 321
[3] SHIOSAKI T, 1980, APPL PHYS LETT, V36, P634
[4] RF-SPUTTERED ALUMINUM NITRIDE FILMS ON SAPPHIRE
SHUSKUS, AJ
REEDER, TM
PARADIS, EL
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (04) : 155 - 156
[5] LOW-TEMPERATURE DEPOSITION OF ORIENTED C-AXIS AIN FILMS ON GLASS SUBSTRATES BY REACTIVE MAGNETRON SPUTTERING
TAKEDA, F
HATA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : 1001 - 1002
[6] TAKEDA F, 1980, T I ELECTR COMMUN C, V63, P270
[7] VACUUM DEPOSITION OF AIN ACOUSTIC TRANSDUCERS
WAUK, MT
WINSLOW, DK
[J]. APPLIED PHYSICS LETTERS, 1968, 13 (08) : 286 - &
[8] EPITAXIALLY GROWN AIN AND ITS OPTICAL BAND GAP
YIM, WM
STOFKO, EJ
ZANZUCCHI, PJ
PANKOVE, JI
ETTENBERG, M
GILBERT, SL
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 292 - 296
[9] REACTIVE MOLECULAR-BEAM EPITAXY OF ALUMINUM NITRIDE
YOSHIDA, S
MISAWA, S
FUJII, Y
TAKADA, S
HAYAKAWA, H
GONDA, S
ITOH, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04): : 990 - 993
[10] YOSHIDA S, 1975, APPL PHYS LETT, V26, P462