VERY THIN SILICON EPITAXIAL LAYERS GROWN USING RAPID THERMAL VAPOR-PHASE EPITAXY

被引：10

作者：

CAMPBELL, SA

LEIGHTON, JD

CASE, GH

KNUTSON, KL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 05期

关键词：

D O I：

10.1116/1.584554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1080 / 1083

页数：4

共 17 条

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[8]

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