DIFFERENT CATALYTIC METALS (PT, PD AND IR) FOR GAAS SCHOTTKY-BARRIER SENSORS

被引:36
作者
LECHUGA, LM
CALLE, A
GOLMAYO, D
BRIONES, F
机构
[1] Centro Nacional de Microelectrónica (CSIC), 28006 Madrid, Serrano
关键词
D O I
10.1016/0925-4005(92)80374-7
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The effect of using different catalytic metals in GaAs Schottky diode sensors is evaluated for hydrogen and ammonia. Both thick and porous metal films are tested and optimized in view of the application.
引用
收藏
页码:614 / 618
页数:5
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