HIGH ACCEPTOR PRODUCTION-RATE IN ELECTRON-IRRADIATED N-TYPE GAAS - IMPACT ON DEFECT MODELS

被引：12

作者：

LOOK, DC

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.98831

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：843 / 845

页数：3

共 10 条

[1] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1985, 55 (12) :1327-1330

[2] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1986, 33 (10) :7346-7348

[3]

Lang D. V., 1977, I PHYS C SER, V31, P70

[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[5]

LOOK DC, 1983, SEMICONDUCT SEMIMET, V19, P93

[6] INTERPRETATION OF DEEP-LEVEL OPTICAL SPECTROSCOPY AND DEEP-LEVEL TRANSIENT SPECTROSCOPY DATA - APPLICATION TO IRRADIATION DEFECTS IN GAAS [J].

LOUALICHE, S ;

NOUAILHAT, A ;

GUILLOT, G ;

LANNOO, M .

PHYSICAL REVIEW B, 1984, 30 (10) :5822-5834

[7] DEFECT IDENTIFICATION IN ELECTRON-IRRADIATED GAAS [J].

LOUALICHE, S ;

GUILLOT, G ;

NOUAILHAT, A ;

BOURGOIN, J .

PHYSICAL REVIEW B, 1982, 26 (12) :7090-7092

[8] IRRADIATION-INDUCED DEFECTS IN GAAS [J].

PONS, D ;

BOURGOIN, JC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20) :3839-3871

[9] ELECTRON MOBILITY IN DIRECT-GAP POLAR SEMICONDUCTORS [J].

RODE, DL .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (04) :1012-+

[10] ELECTRON MOBILITY IN HIGH-PURITY GAAS [J].

WOLFE, CM ;

STILLMAN, GE ;

LINDLEY, WT .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :3088-&

← 1 →