HIGH-SENSITIVITY PLASMA-BASED SPUTTERED NEUTRAL MASS-SPECTROMETRY DEPTH PROFILING OF ZINC-IMPLANTED GAAS

被引：5

作者：

MACLAREN, SW

LOXTON, CM

SAMMANN, E

KIELY, CJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 01期

关键词：

D O I：

10.1116/1.575759

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：17 / 20

页数：4

共 20 条

[1]

ANDERSEN HH, 1983, ION IMPLANTATION BEA

[2] SURFACE-ANALYSIS BY NONRESONANT MULTIPHOTON IONIZATION OF DESORBED OR SPUTTERED SPECIES [J].

BECKER, CH ;

GILLEN, KT .

ANALYTICAL CHEMISTRY, 1984, 56 (09) :1671-1674

[3]

Fletcher J., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P421

[4] APPLICATION OF ION MICROPROBE ANALYZER TO MEASUREMENT OF DISTRIBUTION OF BORON IONS IMPLANTED INTO SILICON CRYSTALS [J].

GITTINS, RP ;

DEARNALEY, G ;

MORGAN, DV .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (09) :1654-+

[5] QUANTITATIVE-ANALYSIS OF HE IN SOLIDS BY SPUTTERED NEUTRAL MASS-SPECTROMETRY [J].

GNASER, H ;

BAY, HL ;

HOFER, WO .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1987, 5 (04) :1194-1197

[6] SPUTTERING OF SURFACES BY POSITIVE ION BEAMS OF LOW ENERGY [J].

HONIG, RE .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (03) :549-555

[7]

KAISER U, 1987, MATER RES B 0816, P48

[8] DETECTION OF SPUTTERED NEUTRALS BY MULTI-PHOTON RESONANCE IONIZATION [J].

KIMOCK, FM ;

BAXTER, JP ;

WINOGRAD, N .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :287-292

[9] PERFORMANCE OF A NEW ION OPTICS FOR QUASISIMULTANEOUS SECONDARY ION, SECONDARY NEUTRAL, AND RESIDUAL-GAS MASS-SPECTROMETRY [J].

LIPINSKY, D ;

JEDE, R ;

GANSCHOW, O ;

BENNINGHOVEN, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (05) :2007-2017

[10] DEPTH PROFILING BY SIMS DEPTH RESOLUTION, DYNAMIC-RANGE AND SENSITIVITY [J].

MAGEE, CW ;

HONIG, RE .

SURFACE AND INTERFACE ANALYSIS, 1982, 4 (02) :35-41

← 1 2 →