ON THE SUITABILITY OF NONHARDENED HIGH-DENSITY SRAMS FOR SPACE APPLICATIONS

被引:44
作者
KOGA, R
CRAIN, WR
CRAWFORD, KB
LAU, DD
PINKERTON, SD
YI, BK
CHITTY, R
机构
[1] FAIRCHILD SPACE & ELECTR CO,GERMANTOWN,MD 20874
[2] CTA,ROCKVILLE,MD 20852
关键词
D O I
10.1109/23.124139
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Several non-radiation-hardened high density static RAMs (SRAMs) were tested for susceptibility to single event upset (SEU) and latchup. Test results indicate that at present only a few such device types are suitable for use in space applications. Several additional factors such as susceptibility to multiple-bit upsets and to radiation induced permanent damage need to be taken into consideration before these device types can be recommended. One non-hardened SRAM device type has recently been used on a low-Earth orbit satellite, enabling the upset rate measured in space to be compared to that predicted from ground-based testing.
引用
收藏
页码:1507 / 1513
页数:7
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