LASER ANNEALING UNDER THE OXIDE LAYERS IN SILICON

被引：6

作者：

NARAYAN, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 01期

关键词：

D O I：

10.1063/1.91703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：66 / 68

页数：3

共 11 条

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FINCH, RH ;

QUEISSER, HJ ;

WASHBURN, J ;

THOMAS, G .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :406-&

[2]

HILL C, 1979, J ELECTRON CHEM SOC, V79, P1315

[3]

HILL C, 1979, LASER SOLID INTERACT, V50, P419

[4] GROWTH OF DISLOCATIONS DURING LASER MELTING AND SOLIDIFICATION [J].

NARAYAN, J ;

YOUNG, FW .

APPLIED PHYSICS LETTERS, 1979, 35 (04) :330-332

[5] COMPARATIVE-STUDY OF LASER AND THERMAL ANNEALING OF BORON-IMPLANTED SILICON [J].

NARAYAN, J ;

YOUNG, RT ;

WHITE, CW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3912-3917

[6]

NARAYAN J, UNPUBLISHED

[7]

QUEISSER JJ, 1962, J APPL PHYS, V33, P1536

[8]

SAMSNOV GV, 1973, OXIDE HDB

[9]

STEPHEN J, 1979, LASER SOLID INTERACT, V50, P337

[10] LASER-ANNEALING BEHAVIOR OF A PHOSPHORUS-IMPLANTED SILICON SUBSTRATE COVERED WITH A SIO2 FILM [J].

TAMURA, H ;

MIYAO, M ;

TOKUYAMA, T .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3783-3784

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