ELECTRICAL-CONDUCTION AT ELEVATED-TEMPERATURES IN THERMALLY GROWN SILICON DIOXIDE FILMS

被引：25

作者：

MILLS, TG

KROGER, FA

机构：

[1] TRW SYST GRP, SEMICOND DIV, LAWNDALE, CA 90260 USA

[2] UNIV SO CALIF, DEPT MAT SCI, LOS ANGELES, CA 90007 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 11期

关键词：

D O I：

10.1149/1.2403308

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1582 / 1586

页数：5

共 12 条

[1] ELECTRONIC CONDUCTION IN THERMALLY GROWN SILICON DIOXIDE FILMS [J].

BRANDER, RW ;

LAMB, DR ;

RUNDLE, PC .

BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (01) :23-&

[2] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[3]

HISKES OR, 1969, MATER SCI ENG, V4, P169

[4] EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION [J].

JORGENSEN .

JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :874-&

[5]

KROGER FA, 1964, P BRIT CERAMIC SOC, V1, P187

[6] THE MECHANISMS FOR SILICON OXIDATION IN STEAM AND OXYGEN [J].

LIGENZA, JR ;

SPITZER, WG .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :131-136

[7] PERMEATION OF GASEOUS OXYGEN THROUGH VITREOUS SILICA [J].

NORTON, FJ .

NATURE, 1961, 191 (478) :701-&

[8]

Swalin R., 1962, THERMODYNAMICS SOLID

[9] EQUILIBRIUM THERMOCHEMISTRY OF SOLID AND LIQUID ALLOYS OF GERMANIUM AND OF SILICON .1. THE SOLUBILITY OF GE AND SI IN ELEMENTS OF GROUP-III, GROUP-IV AND GROUP-V [J].

THURMOND, CD .

JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) :827-830

[10] SODIUM DISTRIBUTION IN THERMAL OXIDE ON SILICON BY RADIOCHEMICAL AND MOS ANALYSIS [J].

YON, E ;

KO, WH ;

KUPER, AB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :276-+

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