DARK CURRENT NOISE PROPERTIES OF A GERMANIUM AVALANCHE PHOTO-DIODE

被引：3

作者：

KANBE, H

GROSSKOPF, G

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 12期

关键词：

D O I：

10.1143/JJAP.19.L767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L767 / L770

页数：4

相关论文

共 14 条

[1] CHARACTERISTICS OF GERMANIUM AVALANCHE PHOTO-DIODES IN WAVELENGTH REGION OF 1-1.6 MU-M [J].

ANDO, H ;

KANBE, H ;

KIMURA, T ;

YAMAOKA, T ;

KANEDA, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (11) :804-809

[2] RESPONSIVITY AND NOISE CHARACTERIZATION OF GE AVALANCHE PHOTO-DIODE THROUGHOUT WAVELENGTH RANGE 1.1-1.7 MU-M [J].

BRAIN, MC .

ELECTRONICS LETTERS, 1979, 15 (25) :821-823

[3] MEASUREMENT OF NOISE SPECTRA OF A GERMANIUM P-N JUNCTION DIODE [J].

HYDE, FJ .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (02) :231-241

[4]

KAGAWA S, UNPUBLISHED

[5] AVALANCHE BUILT-UP TIME OF GERMANIUM AVALANCHE PHOTODIODE [J].

KANEDA, T ;

TAKANASHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (07) :1091-1092

[6] AN N+-N-P GERMANIUM AVALANCHE PHOTO-DIODE [J].

KANEDA, T ;

KAGAWA, S ;

MIKAWA, T ;

TOYAMA, Y ;

ANDO, H .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :572-574

[7] SHALLOW-JUNCTION P+-N GERMANIUM AVALANCHE PHOTO-DIODES (APDS) [J].

KANEDA, T ;

FUKUDA, H ;

MIKAWA, T ;

BANBA, Y ;

TOYAMA, Y ;

ANDO, H .

APPLIED PHYSICS LETTERS, 1979, 34 (12) :866-868

[8] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

MCINTYRE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+

[9] IMPROVED GERMANIUM AVALANCHE PHOTO-DIODES [J].

MIKAMI, O ;

ANDO, H ;

KANBE, H ;

MIKAWA, T ;

KANEDA, T ;

TOYAMA, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (09) :1002-1007

[10] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M [J].

MIYA, T ;

TERUNUMA, Y ;

HOSAKA, T ;

MIYASHITA, T .

ELECTRONICS LETTERS, 1979, 15 (04) :106-108